*Optimized body diode reverse recovery performance
*Low on-resistance and low conduction losses
*Small package
*Ultra Low Gate Charge cause lower driving .

Features
*Optimized body diode reverse recovery performance
*Low on-resistance and low conduction losses
*S.

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr.

NCE6525Q

NCE65R180

NCE65R180F

NCE65R180T

NCE65R1K2

NCE65R1K2D

NCE65R1K2F

NCE65R1K2I

NCE65R1K2K

NCE65R1K2Z

NCE65R260

NCE65R260D

NCE65R260F